Fig. 2 | Scientific Reports

Fig. 2

From: Enhanced performance of T2SLs LWIR avalanche photodiodes with a separate AlxGa1-xSb multiplication layer

Fig. 2

(a) The band structures at 0 V, 77 K. Inset zooms in on the details of the valence band interface of the T2SLs and AlxGa1-xSb, (b) The impact ionization coefficients of AlxGa1-xSb and InP as a function of the magnitude of the electric field (1/E). The x being incrementally varied from a value of 0.0 to 0.06. Solid lines and solid markers: Hole impact ionization coefficient \(\beta\). Dashed lines and open markers: Electron impact ionization coefficient \(\alpha\). Conduction band minimum (CBM), Valence Band Maximum (VBM).

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