Table 3 Input material parameters for the simulation method.
Parameter | InAs | GaSb | AlSb |
|---|---|---|---|
Lattice constant(\(\text{\AA }\)) | 6.0583 | 6.0954 | 6.1297 |
Band gap at 0 K(eV) | 0.42 | 0.81 | 2.386 |
Band gap at 77 K(eV) | 0.407 | 0.80 | 2.374 |
Electron effective mass | 0.022 | 0.041 | 0.13 |
Valence-band offset energy (w.r.t. GaSb) (eV) | -0.56 | 0 | -0.38 |
Spin–orbit split-off energy (eV) | 0.38 | 0.81 | 0.65 |
Luttinger parameters | 19.4 8.545 9.17 | 11.84 4.25 5.01 | – |
