Table 1 Lattice parameters of annealed Ge-Te-Sc thin films prepared at different sputtering power ratios: a is lattice parameter of GeTe cubic cell and V is volume of unit cell. Real chemical composition of prepared films (from EDS, ± 1 at%) is shown as well. Lattice parameters for the sample with highest content of sc are not available due to multiphase character of the sample (traces of tellurium and Sc2Te3). Crystallization temperatures Tc (± 2 °C) determined from Rs temperature-dependent measurements.
From: Sc-doped GeTe thin films prepared by radio-frequency magnetron sputtering
Power Sc / GeTe [W/W] | a [Å] | V [Å3] | Ge [at%] | Te [at%] | Sc [at%] | Tc [°C] |
|---|---|---|---|---|---|---|
0/20 | 5.920 | 207.475 | 48 | 52 | 0 | 153 |
9/20 | 5.936 | 209.154 | 46 | 50 | 4 | 207 |
13/20 | 5.944 | 209.987 | 44 | 48 | 8 | 211 |
15/17 | 5.944 | 209.987 | 43 | 47 | 10 | 249 |
20/18 | NA | NA | 41 | 45 | 14 | 272 |
