Table 2 Ge-Te-Sc thin films data obtained from spectroscopic ellipsometry analysis for amorphous (as-deposited) and crystallized (annealed) samples: thickness ratio (d ± 2 nm), surface roughness (± 1 nm), optical band gap Eg (± 0.02 eV), and absolute values of optical contrast |Δn|+|Δk| values at 405 nm (± 0.02).

From: Sc-doped GeTe thin films prepared by radio-frequency magnetron sputtering

Sample

Thickness ratio

as-dep/ann

Surface roughness

as-dep/ann (nm)

Eg

as-dep/ann (eV)

|Δn|+|Δk|

(405 nm)

Ge48Te52

0.87

2/4

0.71/0.49

3.03

Ge46Te50Sc4

0.85

3/14

0.63/0.50

3.49

Ge44Te48Sc8

0.89

4/20

0.63/0.51

3.75

Ge43Te47Sc10

0.76

7/21

0.59/0.79

3.10

Ge41Te45Sc14

0.77

15/32

0.59/0.70

1.88

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