Fig. 2
From: Zero-Power consumption based evaporative cooling for rated current conduction in SiC mosfets
(a) Measured \(\:{I}_{D}\) versus \(\:{V}_{DS}\) curves of the SiC MOSFET discrete at \(\:{V}_{GS}=15 V\) and different \(\:{T}_{j}\). (b) \(\:{R}_{ON}\) versus \(\:{T}_{j}\) curves of the SiC MOSFET discrete at \(\:{V}_{GS}=15 V\) and different \(\:{I}_{D}\). \(\:{R}_{ON}\) is equal to the inverse of the slope of \(\:{I}_{D}\) versus \(\:{V}_{DS}\) curve.
