Fig. 3
From: Zero-Power consumption based evaporative cooling for rated current conduction in SiC mosfets
(a) Measured time-dependent \(\:{T}_{j}\) of the SiC MOSFET discrete biased at \(\:{V}_{GS}=15\:V\) and \(\:{I}_{D}=5\:to\:7\:A\:\) (\(\:500\:mA\) steps) and cooled by evaporation using five cotton ropes, with and without cooling fan. (b) Measured steady state powers, power densities and \(\:{T}_{j}\) values of the SiC MOSFET under various evaporation conditions, including three, five, and ten cotton ropes, with and without cooling fan. The dotted straight line follows the equation: \(power\; \times \;{R_{thjc}}\; = \;{T_j}\; - T_c\), where \(\:{R}_{thjc}\) = \(\:2.5^\circ\:C\:{W}^{-1}\) and \(\:{T}_{c}\) = \(\:100^\circ\:C\).
