Fig. 4
From: Zero-Power consumption based evaporative cooling for rated current conduction in SiC mosfets
Experimental thermal images of the SiC MOSFET discrete after conducting \(\:{I}_{D}=6\:A\) for \(\:1\), \(\:2.5\) and \(\:5\:min\) without (a) and with (b) cooling fan and using five cotton ropes for water transportation. (c and d) Simulated thermal images under the same conditions as (a) and (b). (e) Experimental and simulated time-resolved \(\:{T}_{j}\) of the SiC MOSFET after conducting \(\:{I}_{D}=6\:A\) with and without cooling fan. Here the experimental time-resolved curves are reproduced from the solid (with cooling fan) and dashed (without cooling fan) green lines in Fig. 3 (a). (f) Simulated time-resolved \(\:{T}_{j}\) of the SiC MOSFET after conducting \(\:{I}_{D}=6\:A\) with and without cooling fan. Here the cellulose paper and cotton ropes are removed for modeling the condition without evaporative cooling.
