Fig. 2
Simulations based on the IntNucl LGD scenario. Comparison between simulations and experiments for: (a,b) poly-crystalline, Si-doped HfO\(_2\) capacitors25, representative of an NLS-like behavior; (c,d) epitaxial Pb(Zr\(_{0.4}\)Ti\(_{0.6}\))O\(_3\) thin films26, representative of a KAI-like behavior. (a) Total polarization \(P_\text {T}\) versus applied field \(E_\text {app}\) for a \(P_\text {T}-E_\text {app}\) simulation setup. The dashed line shows the plot of the \(E_\text {app}\) versus \(P_\text {T}\) quasi-static relation corresponding to the 6-th order polynomial of the LGD model, showing an \(E_\text {IN}\) very close to \(E_\text {C,exp}\). \(E_\text {IN}\) is the mean value of the coercive field in the calibrated LGD model, while \(E_\text {C,exp}\) is the coercive field observed in experiments. (b) Corresponding polarization reversal simulations for a field \(E_\text {app}\) ranging from 1.125 to 3.75 MV/cm. (c,d) report a similar analysis as respectively in (a) and (b), but for the experimental data in26. (c) Total polarization \(P_\text {T}\) versus applied field \(E_\text {app}\) for a \(P_\text {T}-E_\text {app}\) simulation setup. (d) Corresponding polarization reversal simulations for a field \(E_\text {app}\) ranging from 100 to 500 kV/cm. All simulation parameters are reported in Table 1.
