Fig. 2
From: Wafer-scale radio frequency ZnO Schottky diodes and arithmetic circuits
Electrical characterisation of the nanogap Schottky diode. a, I-V characteristics measured from 10 empty NGEs. The inset shows the manufacturing yield for the empty NGEs processed on three different wafers. b, Energy-band diagram of the NGE Au/ZnO/Al diodes before contact (i.e. no band bending). c, Representative linear I-V curve measured for a ZnO Schottky diode. The inset shows the yield of the ZnO nanogap Schottky diodes from three different wafers. d, semi-logarithmic plots of the I-V curves measured from 10 Schottky diodes. e, Cheung-plot used to calculate the barrier height and series resistance of the ZnO diodes. f, Representative Mott-Schottky plot from where the barrier height, built-in potential, and doping concentration were calculated. g, Real and imaginary impedance (Z) components versus frequency calculated using two-ports S-parameter measurements. The inset image shows the two microwave 500-µm-pitch Ground-Signal-Ground (GSG) probes and the ZnO diode under test. h, Intrinsic cut-off frequency versus current Ion/off values published in the literature and this work.
