Fig. 12
From: Impact of interface roughness correlation on resonant tunnelling diode variation
IV characteristics for device 3 (green dashed line with square markers) and the average (green dotted line) with IR of correlation length \(L_C=2.5\,\text{nm}\), compared against the ‘smooth’ device IV characteristic (black solid line with plus markers). The inset contains the rough \(\text {Al}_{0.3}\text {Ga}_{0.7}\text {As}\) barriers for device 3, which is shown in Fig. 2.
