Fig. 2
From: Impact of interface roughness correlation on resonant tunnelling diode variation
Visualisation of device 3 generated with an IR of correlation length \(L_C=2.5\) nm, one of 25 such RTD devices. The rough \(\hbox {Al}_{0.3}\hbox {Ga}_{0.7}\hbox {As}\) barriers (shown in red) are embedded within a GaAs (transparent blue) nanowire body.
