Fig. 4
From: Impact of interface roughness correlation on resonant tunnelling diode variation
Visualisation of device 23 generated with ‘improved’ IR of anisotropic correlation lengths \(L^{Y}_{C}=2.5\) nm and \(L^{Z}_{C}=5\) nm, one of 25 such RTD devices. The rough \(\text {Al}_{0.3}\text {Ga}_{0.7}\text {As}\) barriers (shown in red) are embedded within a GaAs (transparent blue) nanowire body.
