Table 1 Material parameters used in the simulations.
Parameters | Al: ZnO | i-ZnO | CdS | CZTS | MoS2 |
|---|---|---|---|---|---|
Thickness (µm) | 0.45 | 0.08 | 0.08 | 0.6–2.2 | 0.05–0.3 |
Bandgap (eV) | 3.4 | 3.7 | 2.4 | 1.45 | 1.3 |
Electron affinity (eV) | 4.51 | 4.5 | 4.11 | 4.1 | 4.5 |
Dielectric permittivity (relative) | 9 | 9 | 10 | 7 | 10 |
Effective density of states Ec (cm−3) | 2.2 × 1018 | 2.2 × 1018 | 2.2 × 1019 | 2.2 × 1018 | 2.2 × 1018 |
Effective density of states Ev (cm−3) | 1.8 × 1019 | 1.8 × 1019 | 9.1 × 1018 | 1.8 × 1019 | 1.8 × 1019 |
Electron mobility (cm²/Vs) | 100 | 100 | 100 | 60 | 100 |
Hole mobility (cm²/Vs) | 25 | 25 | 25 | 10 | 25 |
Acceptor concentration, NA (cm−3) | - | - | - | 1 × 1016 | 1.44 × 1018 |
Donor concentration, ND (cm−3) | 1 × 1021 | 1 × 1018 | 1 × 1017 | - | - |
Absorption coefficient (cm−1 eV1/2) | SCAPS data | SCAPS data | SCAPS data | 5 × 104 | SCAPS data |
Bulk defect | - | - | - | acceptor | - |
Capture cross-section of electrons (cm2) | - | - | - | 1 × 10−13 | - |
Capture cross-section of holes (cm2) | - | - | - | 4.3 × 10−13 | - |
Energetic distribution | - | - | - | VB tail | - |
Reference for defect energy level Et | - | - | - | above Ev | - |
Energy with respect to reference (eV) | - | - | - | 0.1 | - |
Total density (cm−3) | - | - | - | 1 × 1012 | - |
