Fig. 5
Energy band diagrams of a MIS junction (SLGR/Si3N4/n-Si) at zero bias, V = 0 (a); and applying a negative bias to the graphene monolayer: (b) V < 0 depletion conditions and (c) V < < 0 in inversion conditions. The graphene single layer is p-doped so that the Fermi energy level is located below the Dirac point. The striped zone represents hole states.
