Fig. 1

Schematic of the multi-layered TI (Bi1.5Sb0.5Te1.8Se1.2) based wideband absorber for the different (a) L resonator structure and (b) complementary L resonator design. The absorber structure is formed with the layers of the bottom metal (Fe/Ti/Cu/Zn/Ag/Au), TiO2 (Si/SiO2/InP), and resonator metal shape (Fe/Ti/Cu/Zn/Ag/Au). The variation in the absorption, reflectance and transmittance for the different shapes of resonator (c) Design M1 and (d) Design M2 structure. The incident wave for the excitation of a broad wavelength spectrum (0.2 to 1.6 μm) is launched from the top of the structure. The variation in the resonance band is generated for the different wavelength bands for both structures.