Fig. 2
From: Design and analysis of NC-FinFET using Pb(ZryTi1−y)O3 under high ionising radiations
(a) potential at 100krad for PZT (before radiation), (b) potential at 2000krad for PZT (after radiation).
Fig. 2 | Scientific Reports
From: Design and analysis of NC-FinFET using Pb(ZryTi1−y)O3 under high ionising radiations
(a) potential at 100krad for PZT (before radiation), (b) potential at 2000krad for PZT (after radiation).
