Table 1 Showing dimensions and material used.
From: Design and analysis of NC-FinFET using Pb(ZryTi1−y)O3 under high ionising radiations
Regions | Dimensions | Materials | Doping |
|---|---|---|---|
Source/ Drain | 40 nm | Si | 2 × 1018 |
Channel (Lg) | 30 nm | Si | 2 × 1016 |
Fin height (HFIN) | 70 nm | Si | 2 × 1016 |
Fin width (WFIN) | 10 nm | Si | 2 × 1016 |
Gate | 30 nm | Platinum (Pt) | NA |
Oxide | 30 nm | Lead zirconate titanate (PZT) | NA |
Substrate | 110 nm | Si | 2 × 1016 |
Box | 110 nm | Silicon dioxide (SiO2) | NA |
Contact | 5 nm | Al | NA |
