Table 2 TID impact on performance parameters of different FinFET.
From: Design and analysis of NC-FinFET using Pb(ZryTi1−y)O3 under high ionising radiations
Parameters | SiO2 | HfO2 | PZT |
|---|---|---|---|
Threshold Voltage (Vth) Shift | Vth shift due to high defect generation | Moderate shift as it has better charge trapping resistance | Minimal Vth shift due to the ferroelectric effect compensating for charge traps |
Increase in Off-State Leakage Current (Ioff) | High Ioff increase due to weak charge control | Moderate Ioff since high-k dielectrics reduce charge trapping | Lowest Ioff increase due to negative capacitance (NC) stabilization |
Increased Gate Leakage Current (Igate) | due to thin oxide and defect formation | Moderate gate leakage, as high-k reduces tunneling probability | Lowest, as the ferroelectric layer acts as a barrier |
Mobility Degradation | Highest degradation | impact due to partial charge compensation | Minimal impact |
