Table 3 Comparative Pre and Post Radiation effect on performance.
From: Design and analysis of NC-FinFET using Pb(ZryTi1−y)O3 under high ionising radiations
Parameters | SiO2 (pre radiation) | SiO2 (post radiation) | HfO2 (pre radiation) | HfO2 post radiation) | PZT (pre radiation) | PZT (post radiation) |
|---|---|---|---|---|---|---|
Ion(A/um) | 10−6 | 10−6 | 10−6 | 10−6 | 10−6 | 10−6 |
Ioff(A/um) | 10−14 | 10−12 | 10−15 | 10−13 | 10−16 | 10−13 |
Ion/Ioff Ratio | 108 | 106 | 109 | 107 | 1010 | 107 |
Transconductance: gm (A/V) | 7.06 × 10−6 | 5.22 × 10−6 | 7.31 × 10−6 | 5.28 × 10−6 | 7.29 × 10−6 | 5.40 × 10−6 |
Transconductance efficiency: gm/Id | 3.83 V−1 | 2.83 V−1 | 3.84 V−1 | 2.77 V−1 | 3.87 V−1 | 2.87 V−1 |
Subthreshold Slope (mV/decade) | 69.18 | 49.88031 | 60.7 | 36.25806 | 53.36986 | 39.94611 |
Id (A/um) | 1.84 × 10−06 | 1.84 × 10−6 | 1.90 × 10−06 | 1.90 × 10−6 | 1.88 × 10−06 | 1.88 × 10−6 |
Threshold Voltage (Vth) | 0.34791 | 0.34787 | 0.35163 | 0.35163 | 0.35527 | 0.35529 |
