Table 3 Summary of various existing hardened latch designs.
From: Low power and high-speed quadrate node upset tolerant latch design using CNTFET
Design name | Author | Circuit description | Advantages | Limitations |
|---|---|---|---|---|
Delta DICE9 | Eftaxiopoulos, N. et al., (2015) | Data is maintained on three interconnected DICEs, with shared nodes to improve error recovery | DNU self-recovery is provided, and the D-Q delay is reduced utilizing an inverter | TNU cannot be tolerated, and the various feedback loops result in high power consumption |
TNURL24 | A. Yan et al.(2020) | Employs seven SIMs to improve TNU recoverability through redundant data storage | By using interconnected SIMs, it assures reliability of data and exhibits strong resilience | Significant area overhead and power consumption; it is vulnerable to quasi- node disruptions because of its lack of QNU tolerance |
IHTRL25 | Huang Z, et al., (2021) | Enhance stability by integrating a 4 × 4 C-element array, four clock-gated CEs, and four transmission gates | Exhibits high error tolerance and lower delay | Its complex matrix design results in a significant area overhead, and the significance for high- speed applications is limited by its propagation delay (D-Q) |
HTNURE26 | Xu H., et al., (2021) | Comprises twelve 2- input CEs and six pass gates, design with a three-loop interlocked feedback system | Maintains precise data inputs by using feedback loops that are interconnected | Multiple feedback loops result in significant power consumption; a long recovery stage reduces effectiveness in real-time applications |
LTNUT27 | . Lu Y, et al., (2022) | Enhances SEU protection through the combination of an ISEHL latch with multi-level C- elements | Extremely efficient for space applications, which provides total defence against SEU for all nodes within including output | Multiple error-filtering stages result in significant power consumption, and the complex circuit design causes fabrication to be more difficult |
QNUTL28 | A. Yan, et al., (2022) | QNU tolerance can be obtained by using a triple-level Soft- Error-Interceptive Module (SIM) and three DICE cells | Can maintain QNU events while enhancing the reliability in radiation conditions | Higher power consumption and circuit complexity; incomplete QNU self- recovery, which could result in latching problems in extreme cases |
HLTNURL29 | Y. Dai., et al., (2022) | Increases TNU resilience by using a timing clock-gating method and feedback system | Provides strong TNU protection while maintaining data integrity under fault conditions caused on by radiation | Complex feedback as well as recovery connects lead to high power consumption; integration in small nano electronic systems is limited by a large silicon area |
LCTNUCR30 | S. Cai, et al., (2023) | It utilizes multiple clocked four-input C-elements to improve upset recovery | Achieves TNU self- recovery and provides strong fault tolerance in radiation-sensitive environments | A high transistor counts results in excessive area overhead making integration into large- scale circuits is challenging due to complex design |
ADTRL31 | A. Yan, et al., (2023) | Uses three modified DICE cells and six transmission gates are employed to improve fault tolerance | Reduces power consumption compared to other TNU-resilient latches while offering robust node-upset resilience | The modified DICE structure increases design complexity, eventually resulting in greater area and minimum delay |
TSRL32 | Y. Bai, et al., (2024) | A quadrilateral recovery structure which includes four clock-gated dual- input CEs and twelve dual-input CEs | Recoverable from any possible TNUs with a robust error correction system | The use of several dual-input CEs results in a large area overhead and prolonged recovery periods for TNU faults |