Fig. 3 | Scientific Reports

Fig. 3

From: Dielectric function and thermo-optic coefficients of silicon-doped GaN substrates at elevated temperature from 298 K to 873 K in the UV-Vis-NIR spectrum

Fig. 3

Real part (a) and imaginary part (b) of dielectric function \(\varepsilon\) of silicon-doped GaN at elevated temperatures ranging from 298 K to 873 K. The inset provides a zoomed-in view of the spectral range highlighted by the black frame, with the black arrow indicating the trend of changes at elevated temperatures.

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