Fig. 5
(a) The simulated Jdark-V characteristic of the p+-FLG/n–-ZnO NWs photodetector in logarithmic and linear scale at 300 K, demonstrating the current rectification behavior, indicative of the diode-like operation of the device under dark conditions. (b) The simulated J-V characteristic of the p+-FLG/n–-ZnO NWs photodetector under the dark and UV illumination at 350 nm wavelength with an intensity of 1 W/cm2, illustrating both photovoltaic and photoconductive modes of operation. The close match between the experimental data (solid curves) and analytical modeling (open symbols) highlights the accuracy of the theoretical model, as evidenced by R2 values of 0.81 and 0.96 under dark and illuminated conditions, respectively.
