Fig. 4
From: Large-scale atomistic study of plasticity in amorphous gallium oxide with ab-initio accuracy
(a–d) RDF and PRDFs of the a-\({\text {Ga}_{2}\text {O}_{3}}\) and a-\({\text {Al}_{2}\text {O}_{3}}\) structures at 300K. (e, f) Bond angle distribution of a-\({\text {Ga}_{2}\text {O}_{3}}\) and a-\({\text {Al}_{2}\text {O}_{3}}\) structure. X indicates cation atom Ga or Al. Cutoff distance is 2.3 Å in creation of bonds. The bin size is \(1^\circ\) and the results are normalized by the total number of bonds. (g, h) CDs of cations and O atoms, and (i) polyhedra type in a-\({\text {Ga}_{2}\text {O}_{3}}\) and a-\({\text {Al}_{2}\text {O}_{3}}\). Results are normalized by the total number of the corresponding type.
