Table 1 A comparison of performances for UTC-PDs with and without DBR layers working on 1550 nm.
From: Modelling and optimization of Ge/GaAs uni-travelling carrier photodiodes
Bias Voltage − 2 V | 5 µm | 6 µm | 7 µm | 8 µm | |
|---|---|---|---|---|---|
With DBR Layers | Photocurrent (mA) | 2.25 | 2.39 | 2.62 | 2.89 |
Responsivity (A/W) | 0.5 | 0.53 | 0.59 | 0.7 | |
Without DBR Layers | Photocurrent (mA) | 0.89 | 1.01 | 1.08 | 1.12 |
Responsivity (A/W) | 0.176 | 0.193 | 0.235 | 0.248 | |
