Table 2 A comparison of performances for this work and other UTC-PDs working on 1550 nm optical source.
From: Modelling and optimization of Ge/GaAs uni-travelling carrier photodiodes
3-dB bandwidth (GHz) | Photocurrent (mA) | Dark current (nA) | Size (µm) | Responsivity (A/W) | Material | Illumination type | References |
|---|---|---|---|---|---|---|---|
54 @ -2 V | 2.25 @ -2 V | 117 @ -2 V | D: 5 | 0.5 | Ge/GaAs | Vertical | This work |
9.3 @ -2 V | - | 8 @ -1 V | D: 10 | 0.11 | Ge/GaAs | Vertical | |
12.8 @ -1.5 V | - | 30,000 @ -2 V | D: 27 | 0.36 | InP | Vertical | |
52.2@ -2 V | - | - | D: 14 | 0.33 | InP | Vertical | |
110 @ -4 V | 23 @ -4 V | 50 @ -4 V | 2 × 25 | 0.53 | InP | Waveguide | |
9.3 @ -5 V | 2.5 @ -2 V | 1000 @ 0 V | D: 15 | 0.18 | Ge/Si | Vertical | |
18 @ -3 V | 20 @ -3 V | 8900 @ -2 V | D: 14 | 0.12 | Ge/Si | Vertical | |
40 @ -3 V | 1.5 @ -5 V | 2000 @ -5 V | 4 × 13 | 0.5 | Ge/Si | Waveguide |
