Fig. 4
From: Study on electronic transport and optoelectronic properties of semiconductor 2D Ge₂Y₂ (Y = As, P, N)
(a) Schematic of p-i-n junction field-effect transistor in α-Ge2As2 monolayer. I-V curves and rectification ratio curves at gate voltages of 0 (b), -5 (c), and 5 V (d).
