Fig. 5
From: Study on electronic transport and optoelectronic properties of semiconductor 2D Ge₂Y₂ (Y = As, P, N)
Transport characteristics of p-i-n junction field-effect transistor (FET) based on α-Ge2P2 monolayer at different gate voltages. I-V curves (a) and rectification ratio curves (b) of α-Ge2P2 monolayer p-i-n junction FET at gate voltages of 0, 5, and 10 V.
