Fig. 8
From: Study on electronic transport and optoelectronic properties of semiconductor 2D Ge₂Y₂ (Y = As, P, N)
Optoelectronic properties of α-Ge2Y2 monolayers. (a) Schematic of p-i-n junction optoelectronic transistor in α-Ge2As2 monolayer. The photocurrent of α-Ge2As2 monolayer (b), α-Ge2P2 monolayer(c) and α-Ge2N2 monolayer (d) optoelectronic transistor at zero bias voltage (no power source).
