Table 1 Electrical parameters used for CsPb0.75Sn0.25IBr2/Cs2TiI6 tandem solar cell, input to SCAPS − 1D simulator50,51,52,53,54,55,56,57,58,59,60.
Electrical parameters | TiO2 | N- PDI | CsPb0.75Sn0.25IBr2 | Cs2TiI6 | Spiro-OMeTAD | PEDOT |
---|---|---|---|---|---|---|
Thickness (nm) | 50 | 50 | 100 − 1000 | 100–1000 | 100 | 100 |
Band gap (eV) | 3.2 | 2.33 | 1.78 | 1.02 | 3 | 1.6 |
Electron affinity (eV) | 4.26 | 3.72 | 3.7 | 4 | 2.45 | 3.4 |
Dielectric Permittivity | 9 | 9 | 8 | 6.9 | 3 | 3 |
CB effective density of states (1/cm3) | 2.2 × 1018 | 2.2 × 1018 | 2 × 1018 | 4.96 × 1019 | 1 × 1019 | 2.2 × 1018 |
VB effective density of states (1/cm3) | 1.8 × 1019 | 1.8 × 1019 | 5 × 1018 | 1.75 × 1019 | 1 × 1019 | 1.8 × 1019 |
Electron/hole thermal velocity (cm/s) | 1 × 107 | 1 × 107 | 1 × 107 | 1 × 107 | 1 × 107 | 1 × 107 |
Electron/hole mobility (cm2/Vs) | 20/10 | 0.013/0.013 | 20/20 | 0.236 /0.171 | 0.0002/ 0.0002 | 0.045/0.045 |
Donor density (1/cm3) | 9 × 1016 | 9 × 1016 | - | 3 × 1019 | - | - |
Acceptor density (1/cm3) | - | - | - | 3 × 1018 | 2 × 1018 | 1 × 1019 |
Total defect density (1/cm3) | 1015 | 1015 | 1015 | 1014 | 1014 | 1015 |