Fig. 1 | npj 2D Materials and Applications

Fig. 1

From: A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

Fig. 1

a The schematic view of the Gr/Si UV photodetector coated with an Al2O3 anti-reflection layer. Edge and top metal contacts for graphene are used to reduce the contact resistance of the devices, which is crucial for high speed photodetectors. b The SEM cross-section view of the Gr/Si photodetector. c The photograph of the packaged 6 × 6 array devices for characterization. d The microscope image of one photodetector before the deposition of Al2O3 anti-reflection layer. The device active area is 500 × 500 µm2. e The Raman spectrum of graphene on SiO2 and Si substrate. f The absorption (%) of a single layer graphene on quartz substrate and the absorption coefficient (α) of Si

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