Fig. 2 | npj 2D Materials and Applications

Fig. 2

From: A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

Fig. 2

a The current density vs. voltage (J–V) characteristics of the graphene/Si Schottky junction in darkness and under illumination of 365 nm UV light. The effective area is 0.25 mm2. b The energy band diagram of the graphene/Si photodiode. c The J–V characteristics of the Gr/Si photodiode under 365 nm UV irradiance with different incident powers. d The photocurrent density (J ph) as a linear function of incident power (P in), at V b = 0.0 V (self-powered) mode. Also shown is the relation of photovoltage (Voc) with P in

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