Fig. 2
From: Anisotropic etching of graphite and graphene in a remote hydrogen plasma
Pressure dependence of graphite exposures. a AFM images (tapping mode) of graphite surfaces for various p, as indicated, exposed for 1 h at d = 52 cm and T = 400 °C, all shown on the same color scale. All panels are 3 × 3 μm2, scale bar is 1 μm. b, c Histograms from 10 × 10 μm2 scans, displaying the number of holes against hole diameter (bin size 20 nm) for p as labeled. d Length L g of the optically visible plasma as a function of p. The dashed curve is a \(1/\sqrt p \) fit. e Number of holes vs. distance from plasma edge d−L g . A lower bound of 300 holes is given for the heavily etched cases where an exact hole-count was not feasible. The dashed black line is an exponential fit to the data with <300 holes with 1/e decay length ~ 5 cm
