Fig. 2

Transport properties of 8 nm Fe₃GeTe₂ thin film. a R-T curve, showing a metallic characteristic. The bottom inset is a fit to the variable range hopping model, ln(R _xx ) ~ T ^–1/3. The scale bar of the top inset Hall-bar structure is 1 mm. b Angle-dependent anomalous Hall data. The measurement geometry is displayed in the inset. With magnetic field changing from perpendicular (θ = 0^o) to parallel (θ = 90^o) to the sample surface, the coercive field increases largely, from which the easy axis can be determined to be out-of-plane. c Anomalous Hall data at different temperatures with the offset of 50 Ω. With rising temperature, the coercive field decreases successively. The hysteresis at 200 K is very small, the coercive field at which is displayed in 2 e. d Carrier density and mobility at different temperatures. e Temperature-dependent coercive fields, which are calculated from anomalous Hall results (Fig. 2c). The error bars were estimated to be around 0.01 Tesla in the whole temperature range