Fig. 1
From: Phonon-assisted oscillatory exciton dynamics in monolayer MoSe2

Oscillatory enhancements of neutral exciton PL intensity in monolayer MoSe2. a Optical micrograph of an MoSe2 monolayer on 285-nm-thick SiO2 on silicon. Scale bar: 10 μm. b PLE intensity map of the monolayer shown in a, indicating neutral exciton (X0) and trion (X−) emission centered at 1.650 and 1.624 eV, respectively. Arrows indicate regions of PL enhancement. Color bar: counts per second. c PL spectra at two distinct excitation energies showing the variation of X0 (but not X−) PL with excitation energy