Fig. 1
From: Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion
Structure of atomically thin GaSe. a Schematic drawing of the structure of ε-GaSe. b Simplified schematic drawing of the band structure of monolayer GaSe showing the unusual valence band dispersion. Only the top of the valence and bottom of the conduction band are shown. c AFM image of ultrathin GaSe grown on the surface of GaAs using MBE. The scale bar is 500 nm long. Labels 1L, 2L, and 3L refer to monolayer, bilayer, and trilayer regions of the film. d Height histogram based on the AFM image in (c)
