Fig. 2
From: Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion
GaSe film morphology examined using STEM. a EDAX Ga elemental map. b EDAX elemental map of As and Se. c Cross-sectional STEM image of GaSe. Inset shows a zoomed-in region from the outlined rectangle with the extracted out-of-plane lattice constant c = 0.8 nm. Scale bar: 2 nm. d STEM image with the schematic of ɛ-GaSe lattices with 2 H (A + B) stacking. Scale bar: 0.5 nm. e Intensity profile along the dashed line in d, showing the in-plane lattice constant a= 0.38 nm
