Fig. 3
From: Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion
k-PEEM images and electronic band-structure of as-grown nominal bilayer GaSe. a k-PEEM images acquired at different binding energies EB (with respect to Fermi level EF = 0 eV) from the near-Fermi-level energy towards deep valence-band. b Electronic band structures along high-symmetry Γ to K (left) and Γ to M (right) directions. c Second-derivative electronic structures with enhanced contrast. The dashed line represents the VBM, which is ~0.88 eV below the Fermi level EF. The calculated band structures are presented as black curves12
