Fig. 4
From: Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion
High-resolution electronic band-structure near the Γ point of nominal bilayer GaSe. a Electronic structure near the Γ point (b) second-derivative electronic structure from (a). Binding energy EB is with respect to the Fermi level EF = 0 eV
