Fig. 5
From: Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion
Inverted band structure of the top-most valence band. a 2nd derivative-filtered k-PEEM image at VBM (EB = 0.88 eV). The dotted line indicates the basis for the intensity profile analysis around the Γ point in (b). b Angular averaged intensity profile around the Γ point k = 0 Å−1 through the dotted line in (a). c Dispersion at the top of the valence band reconstructed along the three equivalent M-Γ-M′ directions. d Angular average k-PEEM intensity map around the Γ point of the topmost valence band. The solid line indicates the trace of intensity maxima of the topmost valence band structure using energy-distribution curve analysis
