Fig. 1
From: Electronic transport in a two-dimensional superlattice engineered via self-assembled nanostructures
Device schematics and images. a Schematic of the strain superlattice device structure. SiO2 nanospheres (NSs) with 20 nm diameter are assembled on 300 nm SiO2/n++ Si substrate. Graphene is stacked on top of the NSs and contacted by 1 nm Cr/110 nm Au. Channel length and width are between 0.6–2.4 μm in all the fabricated devices. b Scanning electron microscopy (SEM) image of one Gr–NS superlattice device, showing the Au contacts, SiO2 nanospheres, and graphene on nanospheres. c High-resolution SEM images of a monolayer NS assembly, where each region enclosed by red dashed lines is a single-crystalline domain
