Fig. 3
From: Electronic transport in a two-dimensional superlattice engineered via self-assembled nanostructures
Experimental strain manipulation and the effect on superlattice transport. a Correlation analysis of the measured Raman G and 2D peak positions, revealing a decrease of spatially averaged strain by 20% ± 4.9% after temperature cycling. In contrast, the average doping value shows negligible change (an increase of 2.3% ± 8.8%). Each point represents a spectrum obtained at an optical pixel with a size of ~0.5 × 0.5 μm2 (details in Supplementary Section 1.5). b Conductivity vs carrier density for Gr–NS2, after the first cool down to 2 K (purple curve), and after warming up to 300 K then cooling down to 2 K again (dark blue curve). c Normalized conductivity for the same devices shown in b, and the control device Gr1 (black curve, same as that in the left panel of Fig. 2d). The curves are expanded to a carrier density range close to the SDP, and the kink angles of the Gr–NS2 device before and after temperature cycling are labeled as θ1 and θ2, respectively
