Fig. 3

Gate induced changes in the complex refractive index, \((\tilde n = n + ik)\) of MoS2 monolayer extracted from ellipsometric measurements: the real part, n (a) and the imaginary part, k (b). Electrical tuning of the Lorentzian parameters for the complex refractive index of the CVD MoS2 monolayer. c Oscillator strengths, fA,B and (d) Spectral width of A and B excitonic absorption bands, γA,B as a function of density of injected charge carrier density, ne. The solid lines in Fig. 3(c) show the linear fit to the data. Inset: the gate-dependent density of induced charge carriers