Fig. 3: Detailed flowchart of ΔID featurization. | npj 2D Materials and Applications

Fig. 3: Detailed flowchart of ΔID featurization.

From: Multiple machine learning approach to characterize two-dimensional nanoelectronic devices via featurization of charge fluctuation

Fig. 3

a Transfer characteristics (ID − VG) of 2D layered FETs measured under various conditions; b ΔID(t) data measured at a particular VD and VG and then divided into specific frames with sampling period; c current power spectral densities (SI) in the frequency domain of each frame converted through FFT; d current MFCC comprising 2D array, X(class)i, obtained by concatenating current MFCC vector, x, processed through Mel filter and DCT; e sectional illustration of carrier behavior in a 2D layered FET; f SI(f) at a particular VD for several VG and spectral envelopes (the darker color, the larger VG); g Nit and αSC distributions, which were calculated by carrier number fluctuation-correlated mobility fluctuation (CNF-CMF) model of each class (the box plots are defined by 25th and 75th percentile); h engineered current MFCC 2D array, which contains carrier behaviors (the darker color, the smaller value).

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