Fig. 6: Depiction of direct tunneling mechanism under interface charge carrier accumulation and depletion.
From: Passivation of InP solar cells using large area hexagonal-BN layers
A band diagram depicting the direct quantum mechanical tunneling from i-InP to ITO. Primarily two tunneling components can be calculated using Eq. (10): electron tunneling current from the conduction band (JECB), and hole tunneling from the valence band (JHVB). ϕECB is the barrier height for electron tunneling from the i-InP conduction band with ITO, and ϕHVB is the barrier height for holes tunneling from the i-InP valence band to ITO. Because ϕECB < ϕHVB, and there is an accumulation of electrons at the interface, JECB ≫ JHVB.
