Fig. 4: Epitaxy and orientation during the disintegration of few-layer MoS2 on in situ microfabricated heating chip.
a Large area BF-TEM image of the disintegrated portion of MoS2 where a portion of the flake has completely disintegrated. b Partially disintegrated MoS2 with a supporting, continuous layer of MoS2 underlying the islands, leading to an epitaxial alignment of the islands over the continuous single crystalline layer. c Continuous bilayer MoS2 disintegrated at 700 °C upon rapid heating shows islands on top of continuous regions as well as fully disintegrated regions. Inset presents an atomic resolution image demonstrating epitaxial alignment in the partially disintegrated region and randomly oriented islands in the completely disintegrated region. d Quantitative measurement of island size and shape after the non-equilibrium diffusion. The lines are color coded to island shape in the legend which corresponds to the shape factors of regular polygons with equivalent perimeters (scale bars: a, b, c: 50 nm, c—inset: 5 nm).
