Fig. 5: VISH polarity change with additional sputtering time of Sb2Te3 in Device-A. | npj 2D Materials and Applications

Fig. 5: VISH polarity change with additional sputtering time of Sb2Te3 in Device-A.

From: Topologically protected spin diffusion and spin generator using chalcogenide superlattices

Fig. 5

jc and the electrode distance were fixed to 2 mA and 200 μm, respectively. Hence, js, ←, and → are spin current and the directions. P and ↑ ↓ are the electric dipole direction of a Ge2Te2 layer. VISHs are normalized using VISH at 11 seconds corresponding to the exact thickness of one Sb2Te3 layer, corresponding to the exact (Ge2Te2)/(Sb2Te3) thickness, which is shown as “0” state in the top yellow panel. Additional half to two-layer models due to Sb and Te atoms are also shown as “1/2”, “1”, 3/2,” and “2”, respectively.

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