Table 1 Summary of different fabrication methods for various layered vdW materials and their properties.
Fabrication methods | 2D Materials | Comments | |
|---|---|---|---|
CVD | LPCVD & APCVD | Mostly in Cu substrate. | |
MoS2, WS2, MoSe2, WSe2 | Monolayer | ||
Exfoliation | Adhesive tape, wedge-based, graphite oxide reduction, shear-mixing, sonication, molten salts, electrochemical synthesis | ||
TMDs87 | Shear-mixing | 2–12 layers, length 40–200 nm, concentrations up to 0.5 mg mL−1, nanosheets | |
Wet and dry ball milling | Scalable production, simple procedure, high concentration, control of size and thickness is difficult | ||
hBN87 | Shear-mixing | average thickness 4–12 nm, tens to hundreds of nanometer lateral size | |
Wet and dry ball milling | few-layer BN | ||
2D-Xenes87 | Shear-mixing | Lateral size several microns, few layers. | |
Hydrothermal self-assembly | GO nanosheets89 | Bottom up | tunable thickness ranging from ∼1 nm to ∼1500 nm (monolayer) |
Intercalation-assisted exfoliation- oxidation based | Oxidation of graphite by KMnO4, KNO3,… | High yield, thickness ~ 1 nm, scalable but explosion risk, Low electrical conductivity of GO | |
Gas phase intercalation | Yield: dependent on intercalation agents, thickness: few layers, sufficient for layer materials with strong in-plane bonding | ||
Intercalation-assisted exfoliation- reduction based | Gas phase intercalation | High yield, thickness: mono-few layers, high conductivity of metal chalcogenides, time consuming, relatively small lateral size | |
Liquid phase intercalation | High yield, thickness: mono-few layers, tunable semiconductor, and metallic phase percentage, suitable for large-scale production, sensitive to moisture and oxygen | ||
Electrochemical intercalation | High yield, thickness: monolayers, safe, high cost | ||
