Fig. 3: Synaptic plasticity of the InSe-based device. | npj 2D Materials and Applications

Fig. 3: Synaptic plasticity of the InSe-based device.

From: Carrier-capture-assisted optoelectronics based on van der Waals materials to imitate medicine-acting metaplasticity

Fig. 3

a Short-term plasticity (STP) and b long-term plasticity (LTP) behavior of the InSe optoelectronic synapse illuminated by a 405-nm laser with a pulse width of 500 ms, a power density of 0.245 W cm−2, and frequency of 0.2 Hz (STP) and 1 Hz (LTP). The amplitudes and weight variations (ΔW1) of the postsynaptic current (PSC) under different c presynaptic pulse widths increasing from 0.05 to 10 s and d illumination intensity ranging from 10−6 to 0.245 W cm−2. e Paired-pulse facilitation (PPF) emulated by two identical presynaptic spikes (power intensity of 0.245 W cm−2, exposure duration of 500 ms) and PPF ratio as a function of pulse interval (Δt). f PSC response triggered by a series of ten presynaptic spikes and the weight change of PSC (ΔW10) as a function of frequency. Note that all results were done at Vbg = −40 V and Vds = 0.5 V.

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