Fig. 2: Twist angle-dependent transition temperature for R- and H-type heterostructures.
From: Temperature dependent moiré trapping of interlayer excitons in MoSe2-WSe2 heterostructures
a, b Transition temperature as a function of excitation power for an R(H)-type sample, which decreases (increases) with increasing power. The insets show the full temperature- and power-dependent integrated IX PL maps. c, d Temperature- and lifetime-dependent integrated IX PL map for an R(H)-type sample. The insets show the results of a biexponential fit for each temperature. The short lifetime t1 is on order of 200 ns (12 ns) for R(H)-type samples at low temperature. In both cases, the lifetime decreases with increasing temperature. The long lifetime t2 component is on order of 900 ns (300 ns) and is relatively constant with temperature.
