Fig. 4: Pressure-dependent SOC.
From: Boosting proximity spin–orbit coupling in graphene/WSe2 heterostructures via hydrostatic pressure
a Comparison of averaged Δσavg(B) measurement curves for each pressure at 4 V. Clear signature of the WL→WAL evolution is visible. Solid blue lines for B > 0: fits using Eq. (1). b Two-terminal magnetoconductance for 1.8 GPa pressure at fixed gate voltages with ±1.5 V averaging to reduce the effect of UCF, similarly to 3c. The WAL peak observed in a is present at all gate values with changing amplitude but the width staying approximately the same. At higher fields (B > 5 mT) the influence of UCF is still dominant. c Summary plot of the fit values of τφ, τasy. The error bars represent uncertainty assessed by our method detailed in Supplementary Note 1. Decreasing τasy with increasing pressure indicates the presence of an increasing Rashba SOC and interlayer coupling strength between graphene and WSe2. d Fit values of τm. Due to the large uncertainty, the value of this parameter cannot be extracted. e λR parameter for each pressure, calculated using the previously extracted parameter values for τasy and τm. Calculated values based on the three-parameter formula (Eq. (1)) are plotted with orange, and values based on the five-parameter formula are plotted with green (see the Supplementary Note 1 for details). A clear growing tendency proves the enhancement of the proximity SOC induced by the WSe2 layer. The data points are slightly shifted horizontally to avoid overlapping error bars.
